The principle of atomic layer deposition is similar to chemical vapor deposition (CVD) except the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate during the reaction. This is accomplished through sequential pulsing of special precursor vapors, each of which forms about one atomic layer during each pulse (reaction cycle). Reaction cycles are then repeated until the desired film thickness is achieved, versus chemical vapor deposition that introduces multiple precursor materials simultaneously.
Contact person: Dr. Sarp Kaya (sarpkaya@ku.edu.tr)